紫外光刻法制備圖案化的低維納米結(jié)構(gòu)陳列.pdf

1、青島大學(xué)碩士學(xué)位論文紫外光刻法制備圖案化的低維納米結(jié)構(gòu)陳列姓名：王樹龍申請學(xué)位級(jí)別：碩士專業(yè)：材料學(xué)指導(dǎo)教師：宋國君20080601青島人學(xué)碩士學(xué)位論文AbstractInthispassage，thesteadyphotoetchingtechnologyofBP一212positivephotoresistisresearchedBP212positivephotoresistisusedinpatterningglassandan

2、odicaluminumoxide(AAO)templatesThebestphotoetchingtechnologyconditionsarefllowing：thespinphotoresistvolumeis02ml；thelowrollingspeedis600r／minandspinning5second；thehighrollingspeedis2500r／minandspinning30second；thetimeofp

3、recedingdryingis15minute；thetimeofexposureis50second；thetimeofafterdryingis15minuteUltravioletradiation(UV)photolithographicmethodsareutilizedtoformsetpatternsontoporousanodicaluminumoxide(nnO)templatesThen，polystyreneon

4、e—dimensionalnanostructuresarepreparedbydepositingasolutionofpolymerintothismodifiedtemplateBP212positivephotoresistisusedinpatterningAAOtemplatesSamplesaredissolved1or2hoursbymixtureofphosphoricacidandchromicacidorNaOHs

5、olventThen，patternedpolystyrenenanowirearraysareproducedTheproductswerecharacterizedbyscanningelectronmicroscopy(SEM)andX—rayenergydispersivespectroscopy(EDS)TheresultsofSEMilluminatedthatthepatterncontainsmanyidenticalc

6、ircularstructures，thediameterofeachrotundityisabout5∥mAndthespacebetweeneachcircularityisalso5llmAndthepatternedpolystyrenenanowirearrayscompletelycopiedthepatternonthemaskCunanowiresaresuccessfullypreparedviaelectrochem

7、icaldecompositionintheAAOmembraneofa200nminaperturediameterBesides，patternedCunanowiresarefabricatedbypholithographyBythismethodthedepositingtimecanbecontrolledtogetCunanowireswithvariouslength／diameterratio，andthepatter